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Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
p-type Si:B
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Resistivity:
1-100
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Thickness:
12"
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Surface:
750 ±50
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Grade:
SEMITEST (TTV<25µm), Notch, Bow/Warp<50µm, Empak cst
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Delivery Time:
15-30 days
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$100.00 |
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$100.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
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Resistivity:
FZ>20,000
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Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, MCC Lifetime>1,000µs, Empak cst
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Delivery Time:
15-30 days
|
$200.00 |
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$200.00 |
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