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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    C/C
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    Intrinsic Si:-
  • Resistivity:

    FZ>20,000
  • Thickness:

    6"
  • Surface:

    3,250 ±100
  • Grade:

    SEMI,NO Flats, MCC Lifetime>1,000µs, No Edge Rounding (minor edge-chips), Individual cst
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    FZ2,000-6,000
  • Thickness:

    8"
  • Surface:

    725
  • Grade:

    SEMI Prime, Notch, LaserMark, TTV<6µm, Bow<15µm, Warp1,000µs, Empak cst
  • Delivery Time:

    15-30 days
$150.00
$150.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    1-100
  • Thickness:

    8"
  • Surface:

    725
  • Grade:

    SEMI Prime Notch,Surface Metals<5E10a/cm²,Empak cst
  • Delivery Time:

    15-30 days
$90.00
$90.00

Cart totals

Subtotal $440.00
Shipping

Shipping to CA.

Tax $0.00
Total $440.00 USD
Proceed to checkout