× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ5,000-13,000
-
Thickness:
2"
-
Surface:
6,350 ±100
-
Grade:
NO Flats, Individual cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ4.6-4.8
-
Thickness:
4"
-
Surface:
285 ±3
-
Grade:
PV SEMI Prime, 2Flats,TTV6,202µs,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[522] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
Oct-35
-
Thickness:
6"
-
Surface:
650
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|