Remove item Thumbnail image Product Price Quantity Subtotal
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100] ±1°

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    n-type Si:P

  • Resistivity:

    FZ>9,500

  • Thickness:

    6"

  • Surface:

    950 ±50

  • Grade:

    SEMI Prime, 1Flat (57.5mm),MCC Lifetime>6,934µs,Empak cst

  • Delivery Time:

    15-30 days

$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [311] ±1°

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    p-type Si:B

  • Resistivity:

    1-100

  • Thickness:

    6"

  • Surface:

    1,500 ±50

  • Grade:

    Prime, 2Flats, Empak cst

  • Delivery Time:

    15-30 days

$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    p-type Si:B

  • Resistivity:

    1-3

  • Thickness:

    4"

  • Surface:

    500

  • Grade:

    SEMI Prime, 2Flats, Empak cst

  • Delivery Time:

    15-30 days

$40.00
$40.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100-9.74°towards[111]] ±0.1°

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    n-type Si:P

  • Resistivity:

    FZ50-100

  • Thickness:

    6"

  • Surface:

    480

  • Grade:

    SEMI Prime, 1Flat (57.5mm), Empak cst, TTV15,000µ

  • Delivery Time:

    15-30 days

$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    50.8mm

  • Type:

    P

  • Dopant:

    Phos

  • Growth Method:

    CZ

  • Orientations:

    (111.00)

  • Resistivity:

    1-100

  • Thickness:

    5900-6100µm

  • Surface:

    P/E

  • Grade:

    PRIME

  • Delivery Time:

    15-30 days

$100.00
$100.00
× Placeholder Materials
  • Material:

    Germanium

  • Diameter:

    76.2mm

  • Type:

    P

  • Dopant:

    Ga

  • Growth Method:

    CZ

  • Orientations:

    (100)

  • Resistivity:

    .01-.04

  • Thickness:

    350-400µm

  • Surface:

    P/E

  • Grade:

    EPI

  • Delivery Time:

    15-30 days

$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [111] ±0.3°

  • Type:

    P/E

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    Intrinsic Si:-

  • Resistivity:

    FZ>20,000

  • Thickness:

    4"

  • Surface:

    500

  • Grade:

    SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst

  • Delivery Time:

    15-30 days

$50.00
$50.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/E

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    p-type Si:B

  • Resistivity:

    1-50 {10-23}

  • Thickness:

    8"

  • Surface:

    725

  • Grade:

    SEMI Prime, Notch, TTV<5µm, Bow<15µm, Warp<30µm,Surface Metals<5E10 a/cm²,Empak cst

  • Delivery Time:

    15-30 days

$90.00
$90.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    p-type Si:B

  • Resistivity:

    0.001-0.007

  • Thickness:

    4"

  • Surface:

    1,950

  • Grade:

    SEMI Prime, 2Flats,Free of Striations,Individual cst sealed in a group of 2 wafers

  • Delivery Time:

    15-30 days

$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [311] ±1°

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    n-type Si:P

  • Resistivity:

    10-35

  • Thickness:

    6"

  • Surface:

    650

  • Grade:

    Prime, 2Flats, Empak cst

  • Delivery Time:

    15-30 days

$200.00
$200.00

Cart totals

Subtotal $1,360.00
Shipping

Shipping to CA.

Tax $0.00
Total $1,360.00 USD