× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9.74°towards[111]] ±0.1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ50-100
-
Thickness:
6"
-
Surface:
480
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV15,000µ
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-50 {10-23}
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, TTV<5µm, Bow<15µm, Warp<30µm,Surface Metals<5E10 a/cm²,Empak cst
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[311] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
1,500 ±50
-
Grade:
Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
6"
-
Surface:
6,350
-
Grade:
Prime,NO Flats, Sealed in a multi-wafer box of 5 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|